The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
May. 20, 2022
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); H01J 37/30 (2006.01); H01J 37/305 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2898 (2013.01); H01J 37/3005 (2013.01); H01J 37/305 (2013.01); H01J 37/3178 (2013.01); H01J 2237/31749 (2013.01);
Abstract
A structure for performing analysis includes a first opening formed on a back side of a substrate and passing through the substrate, a second opening connected with a bottom of the first opening and penetrating into a first dielectric layer formed on a front side of the substrate, a first conductive layer formed on a sidewall of the second opening and a contact element in the first dielectric layer, and a second conductive layer formed on a second dielectric layer. The first conductive layer contacts the second conductive layer electrically.