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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11980016 B1

PDFFull Text
Date of Patent:
May. 07, 2024

Filed:

Jul. 20, 2022

Connection between source/drain and gate

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chih-Chuan Yang, Hsinchu, TW;

Chia-Hao Pao, Hsinchu, TW;

Yu-Kuan Lin, Taipei, TW;

Lien-Jung Hung, Hsinchu, TW;

Ping-Wei Wang, Hsin-Chu, TW;

Shih-Hao Lin, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Brian Turner

Int. Cl.
CPC ...
H10B 10/00 (2023.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H10B 10/125 (2023.02); H01L 21/02126 (2013.01); H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66636 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.

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