The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Sep. 28, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Wilfred Gomes, Portland, OR (US);

Sanka Ganesan, Chandler, AZ (US);

Doug Ingerly, Santa Clara, CA (US);

Robert Sankman, Phoenix, AZ (US);

Mark Bohr, Aloha, OR (US);

Debendra Mallik, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/10 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 25/105 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1052 (2013.01); H01L 2225/1058 (2013.01);
Abstract

Systems and methods for providing a low profile stacked die semiconductor package in which a first semiconductor package is stacked with a second semiconductor package and both semiconductor packages are conductively coupled to an active silicon substrate that communicably couples the first semiconductor package to the second semiconductor package. The first semiconductor package may conductively couple to the active silicon substrate using a plurality of interconnects disposed in a first interconnect pattern having a first interconnect pitch. The second semiconductor package may conductively couple to the active silicon substrate using a plurality of interconnects disposed in a second interconnect pattern having a second pitch that is greater than the first pitch. The second semiconductor package may be stacked on the first semiconductor package and conductively coupled to the active silicon substrate using a plurality of conductive members or a plurality of wirebonds.


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