The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Nov. 04, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Shahaji B. More, Hsinchu, TW;
Shih-Chieh Chang, Taipei, TW;
Cheng-Han Lee, New Taipei, TW;
Huai-Tei Yang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/265 (2006.01); H01L 21/3065 (2006.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66803 (2013.01); H01L 21/26513 (2013.01); H01L 21/3065 (2013.01); H01L 29/0847 (2013.01); H01L 29/167 (2013.01); H01L 29/24 (2013.01); H01L 29/41791 (2013.01); H01L 29/66636 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01);
Abstract
Semiconductor structures and method for forming the same are provide. The semiconductor structure includes a fin structure protruding from a substrate and a gate structure formed across the fin structure. The semiconductor structure further includes an Arsenic-doped region formed in the fin structure and a source/drain structure formed over the Arsenic-doped region. In addition, a bottommost portion of the Arsenic-doped region is lower than a bottommost portion of the source/drain structure.