The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Aug. 12, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Sho Kumakura, Miyagi, JP;
Hironari Sasagawa, Miyagi, JP;
Maju Tomura, Miyagi, JP;
Yoshihide Kihara, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); C23C 16/02 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); C23C 16/0227 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); H01L 21/0271 (2013.01); H01L 21/0337 (2013.01); H01L 21/30655 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 21/67207 (2013.01); H01L 21/32 (2013.01);
Abstract
A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.