The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Jan. 30, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Shih-Chun Huang, Hsinchu, TW;
Ya-Wen Yeh, Taipei, TW;
Chien-Wen Lai, Hsinchu, TW;
Wei-Liang Lin, Hsin-Chu, TW;
Ya Hui Chang, Hsinchu, TW;
Yung-Sung Yen, New Taipei, TW;
Ru-Gun Liu, Hsinchu County, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Yu-Tien Shen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.