The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Mar. 24, 2020
Intel Corporation, Santa Clara, CA (US);
Juan G. Alzate Vinasco, Tigard, OR (US);
Travis W. Lajoie, Forest Grove, OR (US);
Abhishek A. Sharma, Hillsboro, OR (US);
Kimberly L Pierce, Beaverton, OR (US);
Elliot N. Tan, Portland, OR (US);
Yu-Jin Chen, Hillsboro, OR (US);
Van H. Le, Portland, OR (US);
Pei-Hua Wang, Beaverton, OR (US);
Bernhard Sell, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments herein describe techniques for a memory device including at least two memory cells. A first memory cell includes a first storage cell and a first transistor to control access to the first storage cell. A second memory cell includes a second storage cell and a second transistor to control access to the second storage cell. A shared contact electrode is shared between the first transistor and the second transistor, the shared contact electrode being coupled to a source area or a drain area of the first transistor, coupled to a source area or a drain area of the second transistor, and further being coupled to a bit line of the memory device. Other embodiments may be described and/or claimed.