The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Dec. 29, 2021
Applicant:
Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);
Inventors:
Mitsuru Haga, Niigata, JP;
Mingqi Li, Shrewsbury, MA (US);
Assignee:
ROHM AND HAAS ELECTRONIC MATERIALS LLC, Marlborough, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/004 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0392 (2013.01); G03F 7/0045 (2013.01); G03F 7/20 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01);
Abstract
Disclosed herein is a pattern formation method, comprising (a) applying a layer of a photoresist composition over a semiconductor substrate, (b) pattern-wise exposing the photoresist composition layer to i-line radiation; and (c) developing the exposed photoresist composition layer to provide a resist relief image; wherein the photoresist composition comprises a non-ionic photoacid generator; a solvent; a first polymer and a second polymer; and wherein the first polymer comprises a polymeric dye.