The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
May. 23, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Shih-Hao Lin, Hsinchu, TW;
Kian-Long Lim, Hsinchu, TW;
Chih-Chuan Yang, Hsinchu, TW;
Chia-Hao Pao, Hsinchu, TW;
Jing-Yi Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
A substrate includes a first doped region having a first type dopant, and a second doped region having a second type dopant and adjacent to the first doped region. A stack is formed that includes first layers and second layers alternating with each other. The first and second layers each have a first and second semiconductor material, respectively. The second semiconductor material is different than the first semiconductor material. A mask element is formed that has an opening in a channel region over the second doped region. A top portion of the stack not covered by the mask element is recessed. The stack is then processed to form a first and a second transistors. The first transistor has a first number of first layers. The second transistor has a second number of first layers. The first number is greater than the second number.