The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Nov. 30, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Julien Frougier, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Chanro Park, Clifton Park, NY (US);

Andrew Gaul, Halfmoon, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract

Embodiments herein describe FETs with channels that form wrap-around contacts (a female portion of a female/male connection) with metal contacts (a male portion of the female/male connection) in order to connect the channels to the drain and source regions. In one embodiment, a first conductive contact is formed underneath a dummy channel. In addition an encapsulation material wraps around the first conductive contact. The dummy channel and the encapsulation material can then be removed and replaced by the material of the channel which, as a result, include a female portion that wraps around the first conductive contact.


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