The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Dec. 08, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hiranmay Biswas, Hsinchu, TW;
Chi-Yeh Yu, Hsinchu, TW;
Kuo-Nan Yang, Hsinchu, TW;
Chung-Hsing Wang, Hsinchu, TW;
Stefan Rusu, Hsinchu, TW;
Chin-Shen Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming an IC structure includes forming first and second power rails at a power rail level. First metal segments are formed at a first metal level above the power rail level. Each first metal segment of the plurality of first metal segments overlap one or both of the first power rail or the second power rail. First vias are formed between the power rail level and the first metal level. Second metal segments are formed at a second metal level above the first metal level. At least one second metal segment of the plurality of second metal segments overlaps the first power rail. At least one second metal segment of the plurality of second metal segments overlaps the second power rail. A plurality of second vias are formed between the first metal level and the second metal level.