The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Aug. 28, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Kam-Tou Sio, Zhubei, TW;
Cheng-Chi Chuang, New Taipei, TW;
Chih-Ming Lai, Hsinchu, TW;
Jiann-Tyng Tzeng, Hsin Chu, TW;
Wei-Cheng Lin, Taichung, TW;
Lipen Yuan, Jhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); G06F 30/394 (2020.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5221 (2013.01); G06F 30/394 (2020.01); H01L 21/76805 (2013.01); H01L 21/76837 (2013.01); H01L 21/76877 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 23/5286 (2013.01); H01L 27/0924 (2013.01);
Abstract
An IC structure includes a fin structure, a contact overlying the fin structure along a first direction, and an isolation layer between the contact and the fin structure. The isolation layer is adjacent to a portion of the contact along a second direction perpendicular to the first direction.