The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Yian-Liang Kuo, Hsinchu, TW;

Kuo-Chung Yee, Taoyuan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/64 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 21/486 (2013.01); H01L 21/563 (2013.01); H01L 21/76898 (2013.01); H01L 23/3114 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5383 (2013.01); H01L 23/642 (2013.01); H01L 24/05 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/367 (2013.01); H01L 23/3735 (2013.01); H01L 2224/023 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05552 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06589 (2013.01);
Abstract

A package structure includes a first thermal dissipation structure, a first semiconductor die, a second semiconductor die. The first thermal dissipation structure includes a semiconductor substrate, conductive vias embedded in the semiconductor substrate, first capacitors electrically connected to the conductive vias, and a thermal transmission structure disposed over the semiconductor substrate and the conductive vias. The first semiconductor die is disposed on the first thermal dissipation structure. The second semiconductor die is disposed on the first semiconductor die opposite to the first thermal dissipation structure.


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