The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
May. 25, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Siyu Zhu, San Jose, CA (US);
Chuanxi Yang, Los Altos, CA (US);
Hang Yu, San Jose, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Yeonju Kwak, Sunnyvale, CA (US);
Jeong Hwan Kim, San Jose, CA (US);
Qian Fu, Pleasanton, CA (US);
Xiawan Yang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.