The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Sep. 03, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sejin Oh, Hwaseong-si, KR;

Iksu Byun, Seoul, KR;

Taemin Earmme, Hwaseong-si, KR;

Jongwoo Sun, Hwaseong-si, KR;

Jewoo Han, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32642 (2013.01); H01J 37/32174 (2013.01); H01J 37/3255 (2013.01); H01J 37/32568 (2013.01); H01J 37/32715 (2013.01); H01L 21/31116 (2013.01); H01L 21/6833 (2013.01); H01L 21/68735 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.


Find Patent Forward Citations

Loading…