The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Apr. 25, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Hsin-Che Chiang, Taipei, TW;

Wei-Chih Kao, Taipei, TW;

Chun-Sheng Liang, Changhua County, TW;

Kuo-Hua Pan, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0245 (2013.01); H01L 21/02507 (2013.01); H01L 21/02587 (2013.01); H01L 29/0847 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a first lattice constant, a dopant blocking layer disposed over the semiconductor substrate, the dopant blocking layer having a second lattice constant different from the first lattice constant, and a buffer layer disposed over the dopant blocking layer, the buffer layer having a third lattice constant different from the second lattice constant. The semiconductor device also includes a plurality of channel members suspended over the buffer layer, an epitaxial feature abutting the channel members, and a gate structure wrapping each of the channel members.


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