The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Aug. 13, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Wei Chen, Hsinchu, TW;

Tzuan-Horng Liu, Taoyuan, TW;

Chia-Hung Liu, Hsinchu, TW;

Hao-Yi Tsai, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 25/065 (2023.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 21/568 (2013.01); H01L 23/3135 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/0657 (2013.01); H01L 24/20 (2013.01); H01L 24/96 (2013.01); H01L 2224/32145 (2013.01);
Abstract

A device die including a first semiconductor die, a second semiconductor die, an anti-arcing layer and a first insulating encapsulant is provided. The second semiconductor die is stacked over and electrically connected to the first semiconductor die. The anti-arcing layer is in contact with the second semiconductor die. The first insulating encapsulant is disposed over the first semiconductor die and laterally encapsulates the second semiconductor die. Furthermore, methods for fabricating device dies are provided.


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