The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Oct. 27, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chih-Chuan Yang, Hsinchu, TW;
Jing-Yi Lin, Hsinchu, TW;
Hsin-Wen Su, Hsinchu, TW;
Shih-Hao Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H10B 10/00 (2023.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/823431 (2013.01); H01L 27/088 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66818 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01); H10B 10/125 (2023.02);
Abstract
Methods and devices that provide a first fin structure, a second fin structure, and a third fin structure disposed over a substrate. A dielectric fin is formed between the first fin structure and the second fin structure, and a conductive line is formed between the second fin structure and the third fin structure.