The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Oct. 07, 2021
Applicants:
National University of Singapore, Singapore, SG;
Agency for Science, Technology and Research, Singapore, SG;
Inventors:
Utkur Mirsaidov, Singapore, SG;
Michel Bosman, Singapore, SG;
Tanmay Ghosh, Singapore, SG;
Zainul Aabdin, Singapore, SG;
Frank Holsteyns, Leuven, BE;
Antoine Pacco, Leuven, BE;
Assignees:
NATIONAL UNIVERSITY OF SINGAPORE, Singapore, SG;
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH, Singapore, SG;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05B 19/4099 (2006.01);
U.S. Cl.
CPC ...
G05B 19/4099 (2013.01); G05B 2219/45031 (2013.01);
Abstract
This document describes a system and method for selectively switching the fast-wet-etching direction of crystalline silicon, c-Si, nanostructures between the () and the () crystallographic planes of c-Si by a simple method of sample agitation. This method effectively allows the invention to achieve anisotropic and isotropic wet-etching of c-Si.