The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Dec. 16, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chao-Hsun Wang, Taoyuan County, TW;
Yu-Feng Yin, Hsinchu County, TW;
Kuo-Yi Chao, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
Feng-Yu Chang, Kaohsiung, TW;
Chen-Yuan Kao, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device includes forming a metal gate stack having a gate dielectric layer and a gate electrode disposed over the gate dielectric layer. The gate electrode includes a first metal layer and a second metal layer. The method further includes performing a plasma treatment to a top surface of the metal gate stack and forming a conductive layer over the treated top surface of the metal gate stack. A top portion of the conductive layer is formed above a top surface of the gate dielectric layer, and a bottom portion of the conductive layer penetrates into the first and the second metal layers of the gate electrode at different distances.