The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Mar. 29, 2019
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Nazila Haratipour, Hillsboro, OR (US);
Chia-Ching Lin, Portland, OR (US);
Sou-Chi Chang, Portland, OR (US);
Ashish Verma Penumatcha, Hillsboro, OR (US);
Owen Loh, Portland, OR (US);
Mengcheng Lu, Portland, OR (US);
Seung Hoon Sung, Portland, OR (US);
Ian A. Young, Portland, OR (US);
Uygar Avci, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01G 4/012 (2006.01); H01G 4/30 (2006.01); H01L 23/522 (2006.01); H10B 51/00 (2023.01);
U.S. Cl.
CPC ...
H01L 28/56 (2013.01); H01G 4/012 (2013.01); H01G 4/30 (2013.01); H01L 23/5226 (2013.01); H10B 51/00 (2023.02);
Abstract
A capacitor is disclosed that includes a first metal layer and a seed layer on the first metal layer. The seed layer includes a polar phase crystalline structure. The capacitor also includes a ferroelectric layer on the seed layer and a second metal layer on the ferroelectric layer.