The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Apr. 18, 2022
Applicant:

Plasma-therm Nes Llc, St. Petersburg, FL (US);

Inventors:

Sarpangala Hariharakeshava Hegde, Fremont, CA (US);

Vincent C. Lee, Fremont, CA (US);

Wei-Hua Hsiao, St. Petersburg, FL (US);

Joseph Barraco, Lutz, FL (US);

Assignee:

PLASMA-THERM NES LLC, St. Petersburg, FL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/46 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3417 (2013.01); C23C 14/46 (2013.01); H01J 37/3464 (2013.01);
Abstract

The present disclosure provides a method for increased target utilization within a sputtering system. A plurality of targets are provided wherein each target is operatively connected to a central axis. An ion beam is generated within the sputtering system. The generated ion beam is directed at a first location of a first target for a first time period. Each target is moved by rotating the central axis. The generated ion beam is directed at a second location of the first target for a second time period.


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