The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Dec. 12, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Shih-Ming Chang, Hsinchu, TW;
Wen Lo, Taipei, TW;
Chun-Hung Liu, Kaohsiung, TW;
Chia-Hua Chang, New Taipei, TW;
Hsin-Wei Wu, Hsinchu, TW;
Ta-Wei Ou, Taichung, TW;
Chien-Chih Chen, Tainan, TW;
Chien-Cheng Chen, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.