The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Jul. 25, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ming-Che Ku, Hsinchu, TW;

Harry-Hak-Lay Chuang, Zhubei, TW;

Hung Cho Wang, Taipei, TW;

Tsun Chung Tu, Tainan, TW;

Jiunyu Tsai, Hsinchu, TW;

Sheng-Huang Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H01F 10/32 (2006.01); H01F 41/34 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H01F 10/3254 (2013.01); H01F 41/34 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); G11C 11/161 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a magnetic tunnel junction arranged between a bottom electrode and a top electrode and surrounded by a dielectric structure disposed over a substrate. The top electrode has a width that decreases as a height of the top electrode increases. A bottom electrode via couples the bottom electrode to a lower interconnect. An upper interconnect structure is coupled to the top electrode. The upper interconnect structure has a vertically extending surface that is disposed laterally between first and second outermost sidewalls of the upper interconnect structure and along a sidewall of the top electrode. The vertically extending surface and the first outermost sidewall are connected to a bottom surface of the upper interconnect structure that is vertically below a top of the top electrode.


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