The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Jun. 27, 2022
Intel Corporation, Santa Clara, CA (US);
Manish Chandhok, Beaverton, OR (US);
Ramanan Chebiam, Hillsboro, OR (US);
Brennen Mueller, Portland, OR (US);
Colin Carver, Hillsboro, OR (US);
Jeffery Bielefeld, Forest Grove, OR (US);
Nafees Kabir, Portland, OR (US);
Richard Vreeland, Beaverton, OR (US);
William Brezinski, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An integrated circuit interconnect structure includes a first interconnect in a first metallization level and a first dielectric adjacent to at least a portion of the first interconnect, where the first dielectric having a first carbon content. The integrated circuit interconnect structure further includes a second interconnect in a second metallization level above the first metallization level. The second interconnect includes a lowermost surface in contact with at least a portion of an uppermost surface of the first interconnect. A second dielectric having a second carbon content is adjacent to at least a portion of the second interconnect and the first dielectric. The first carbon concentration increases with distance away from the lowermost surface of the second interconnect and the second carbon concentration increases with distance away from the uppermost surface of the first interconnect.