The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

Nov. 15, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Jun-Yih Yu, New Taipei, TW;

De-Fang Huang, Hsin-Chu, TW;

De-Chen Tseng, New Taipei, TW;

Jia-Feng Chang, Taichung, TW;

Li-Fang Hsu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/22 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70333 (2013.01); G03F 7/22 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to a method of developing a photosensitive material. The method includes forming a photosensitive material over a substrate. The photosensitive material is exposed to electromagnetic radiation focused at a plurality of different heights over the substrate. The plurality of different heights are vertically separated from one another and are disposed within the photosensitive material along a vertical path that extends in a direction perpendicular to an upper surface of the photosensitive material. The photosensitive material is developed to remove a soluble region.


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