The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

Jul. 31, 2018
Applicant:

Shin-etsu Handotai Co., Ltd., Tokyo, JP;

Inventors:

Kensaku Igarashi, Nishigo-mura, JP;

Tatsuo Abe, Shirakawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/08 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
B08B 3/08 (2013.01); H01L 21/02052 (2013.01); B08B 2203/005 (2013.01);
Abstract

A method for cleaning a silicon wafer includes the steps of: supplying hydrofluoric acid onto a surface of the silicon wafer to treat the silicon wafer while rotating at a first rotational rate, stopping the supply of the hydrofluoric acid and shaking off hydrofluoric acid on the surface of the silicon wafer without supplying pure water onto the surface of the silicon wafer while rotating the silicon wafer at a second rotational rate which is the same as or faster than the first rotational rate, and supplying ozone water onto the surface of the silicon wafer to treat the silicon wafer after shaking the hydrofluoric acid off the surface while rotating at a third rotational rate which is faster than the second rotational rate. This method for cleaning a silicon wafer is capable of suppressing adhesion of water marks and particles and enhancing the wafer quality.


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