The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Sep. 01, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Huimei Zhou, Albany, NY (US);
Miaomiao Wang, Albany, NY (US);
Alexander Reznicek, Troy, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/42392 (2013.01); H01L 29/775 (2013.01);
Abstract
A complementary field effect transistor (CFET) structure including a first transistor disposed above a second transistor, and a first source/drain region of the first transistor disposed above a second source/drain region of the second transistor, wherein the second source/drain region comprises a recessed notch beneath the first source/drain region.