The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Dec. 10, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Amitava Majumdar, Boise, ID (US);

Qianlan Liu, Boise, ID (US);

Pradeep Ramachandran, Lehi, UT (US);

Shawn D. Lyonsmith, Boise, ID (US);

Steve K. McCandless, Nampa, ID (US);

Ted L. Taylor, Boise, ID (US);

Ahmed N. Noemaun, Boise, ID (US);

Gordon A. Haller, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/00 (2017.01); G01N 21/47 (2006.01); G01N 21/21 (2006.01); G01B 1/00 (2006.01); G06N 20/00 (2019.01); G06F 30/367 (2020.01);
U.S. Cl.
CPC ...
G06T 7/0004 (2013.01); G01B 1/00 (2013.01); G01N 21/211 (2013.01); G01N 21/4738 (2013.01); G06F 30/367 (2020.01); G06N 20/00 (2019.01); G01B 2210/56 (2013.01); G06T 2207/10024 (2013.01); G06T 2207/10152 (2013.01); G06T 2207/20081 (2013.01); G06T 2207/30148 (2013.01);
Abstract

A method of predicting virtual metrology data for a wafer lot that includes receiving first image data from an imager system, the first image data relating to at least one first wafer lot, receiving measured metrology data from metrology equipment relating to the at least one first wafer lot, applying one or more machine learning techniques to the first image data and the measured metrology data to generate at least one predictive model for predicting at least one of virtual metrology data or virtual cell metrics data of wafer lots, and utilizing the at least one generated predictive model to generate at least one of first virtual metrology data or first virtual cell metrics data for the first wafer lot.


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