The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Sep. 23, 2021
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Yikang Deng, San Jose, CA (US);

Taegui Kim, San Jose, CA (US);

Yifan Kao, Taoyuan, TW;

Jun Chung Hsu, Cupertino, CA (US);

Assignee:

Apple Inc., Cuperino, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 23/13 (2006.01);
U.S. Cl.
CPC ...
H01L 24/24 (2013.01); H01L 23/49827 (2013.01); H01L 24/25 (2013.01); H01L 24/82 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/13 (2013.01); H01L 2224/2401 (2013.01); H01L 2224/24227 (2013.01); H01L 2224/2518 (2013.01); H01L 2224/82005 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06572 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/19011 (2013.01);
Abstract

An asymmetric stackup structure for an SoC package substrate is disclosed. The package substrate may include a substrate with one or more insulating material layers. A first recess may be formed in an upper surface of the substrate. The recess may be formed down to a conductive layer in the substrate. An integrated passive device may be positioned in the recess. A plurality of build-up layers may be formed on top of the substrate. At least one via path may be formed through the build-up layers and the substrate to connect contacts on the lower surface of the substrate to contacts on the upper surface of the build-up layers.


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