The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Dec. 13, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Po-Hsiang Huang, Hsinchu, TW;
Fong-Yuan Chang, Hsinchu, TW;
Clement Hsingjen Wann, Hsinchu, TW;
Chih-Hsin Ko, Hsinchu, TW;
Sheng-Hsiung Chen, Hsinchu, TW;
Li-Chun Tien, Hsinchu, TW;
Chia-Ming Hsu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of manufacturing an IC structure includes forming a first plurality of fins extending in a first direction on a substrate, a second plurality of fins extending adjacent to the first plurality of fins, a third plurality of fins extending adjacent to the second plurality of fins, and a fourth plurality of fins extending adjacent to the third plurality of fins. Each fin of the first and fourth pluralities of fins includes one of an n-type or p-type fin, each fin of the second and third pluralities of fins includes the other of the n-type or p-type fin, each of the first and third pluralities of fins includes a first total number of fins, and each of the second and fourth pluralities of fins includes a second total number of fins fewer than the first total number of fins.