The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jun. 21, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Shih-Chuan Chiu, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Jia-Chuan You, Taoyuan County, TW;
Tien-Lu Lin, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/76871 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device comprises a fin disposed on a substrate, a source/drain feature disposed over the fin, a silicide layer disposed over the source/drain feature, a seed metal layer disposed over the silicide layer and wrapping around the source/drain feature, and a metal layer disposed on the silicide layer, where the metal layer contacts the seed metal layer.