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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11855007 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

Apr. 27, 2022

Semiconductor structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Rung-De Wang, Kaohsiung, TW;

Chen-Hsun Liu, Tainan, TW;

Chin-Yu Ku, Hsinchu, TW;

Te-Hsun Pang, Tainan, TW;

Chia-Hua Wang, Hsinchu, TW;

Pei-Shing Tsai, Tainan, TW;

Po-Chang Lin, Kaohsiung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

David A Zarneke

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 23/58 (2006.01); H01L 21/78 (2006.01); H01L 21/782 (2006.01); H01L 21/784 (2006.01); H01L 21/8238 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 23/3142 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/585 (2013.01); H01L 21/782 (2013.01); H01L 21/784 (2013.01); H01L 21/823871 (2013.01); H01L 23/49827 (2013.01); H01L 23/5384 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01);
Abstract

A semiconductor structure includes a semiconductor device, a plurality of through semiconductor vias (TSV), a first seal ring, and a second seal ring. The TSVs are in the semiconductor device. Each of the TSVs has a first surface and a second surface opposite to the first surface. The first seal ring is located in proximity to an edge of the semiconductor structure and is physically connected to the first surface of each of the TSVs. The second seal ring is physically connected to the second surface of each of the TSVs.

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