The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Dec. 23, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hung-Chih Hsieh, Miaoli County, TW;

Ming-Hsiao Weng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70633 (2013.01); G03F 7/70625 (2013.01); H01L 22/12 (2013.01);
Abstract

An overlay error measurement method includes disposing a lower-layer pattern over a substrate that includes disposing a first pattern having a first plurality of first sub-patterns extending in a first interval along a first direction and being arranged with a first pitch in a second direction crossing the first direction. The method includes disposing a second pattern having a second plurality of second sub-patterns extending in a second interval along the first direction and being arranged with a second pitch, smaller than the first pitch, in the second direction crossing the first direction. The second sub-patterns are disposed interleaved between the first sub-patterns. The method includes disposing an upper-layer pattern including a third pattern having the first pitch and at least partially overlapping with the lower-layer pattern over the lower-layer pattern and determining an overlay error between the lower-layer pattern and the upper-layer pattern.


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