The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Mar. 07, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jongju Park, Hwaseong-si, KR;

Raewon Yi, Suwon-si, KR;

Hakseung Han, Hwaseong-si, KR;

Seongsue Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/41 (2006.01); G01N 21/956 (2006.01); G03F 1/22 (2012.01); G03F 1/84 (2012.01); G03F 1/24 (2012.01); G01J 9/00 (2006.01); G01N 21/33 (2006.01);
U.S. Cl.
CPC ...
G01N 21/41 (2013.01); G01J 9/00 (2013.01); G01N 21/956 (2013.01); G03F 1/22 (2013.01); G03F 1/24 (2013.01); G03F 1/84 (2013.01); G01N 2021/335 (2013.01); G01N 2021/95676 (2013.01); G01N 2201/061 (2013.01); G01N 2201/0636 (2013.01);
Abstract

An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.


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