The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Jun. 06, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wei-Hao Liao, Taichung, TW;

Hsi-Wen Tien, Hsinchu County, TW;

Chih-Wei Lu, Hsinchu, TW;

Pin-Ren Dai, Hsinchu County, TW;

Chung-Ju Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02);
Abstract

An integrated circuit includes a substrate, a bottom electrode, a dielectric layer, a metal-containing compound layer, a resistance switching element, and a top electrode. The bottom electrode is over the substrate, the bottom electrode having a bottom portion and a top portion over the bottom portion. The bottom portion of the bottom electrode has a sidewall slanted with respect to a sidewall of the top portion of the bottom electrode. The dielectric layer surrounds the bottom portion of the bottom electrode. The metal-containing compound layer surrounds the top portion of the bottom electrode. A top end of the sidewall of the bottom portion of the bottom electrode is higher than a bottom surface of the metal-containing compound layer. The resistance switching element is over the bottom electrode. The top electrode is over the resistance switching element.


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