The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Mar. 28, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Blandine Duriez, Hsinchu, TW;
Marcus Johannes Henricus Van Dal, Hsinchu, TW;
Martin Christopher Holland, Hsinchu, TW;
Gerben Doornbos, Kessel-Lo, BE;
Georgios Vellianitis, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes forming source/drain contact openings extending through at least one dielectric layer to expose source/drain contact regions of source/drain structures. The method further includes depositing a light blocking layer along sidewalls and bottom surfaces of the source/drain contact openings and a topmost surface of the at least one dielectric layer. The method further includes performing a laser annealing process to activate dopants in the source/drain contact region. The method further includes forming source/drain contact structures within source/drain contact openings.