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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11848264 B1

PDFFull Text
Date of Patent:
Dec. 19, 2023

Filed:

Jun. 03, 2021

Semiconductor structure with stacked vias having dome-shaped tips

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Koichi Motoyama, Clifton Park, NY (US);

Kenneth Chun Kuen Cheng, Shatin, HK;

Chanro Park, Clifton Park, NY (US);

Alexander Reznicek, Troy, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

Yuanmin Cai

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/7685 (2013.01); H01L 21/76852 (2013.01); H01L 21/76885 (2013.01); H01L 21/76897 (2013.01); H01L 23/5283 (2013.01); H01L 23/53257 (2013.01); H01L 23/53266 (2013.01);
Abstract

A semiconductor structure may include a metal line, a via above and in electrical contact with the metal lines, and a dielectric layer positioned along a top surface of the metal lines. A top surface of the dielectric layer may be below the dome shaped tip of the via. A top portion of the via may include a dome shaped tip. The semiconductor structure may include a liner positioned along the top surface of the dielectric layer and a top surface of the dome shaped tip of the via. The liner may be made of tantalum nitride or titanium nitride. The dielectric layer may be made of a low-k material. The metal line and the via may be made of ruthenium. The metal line may be made of molybdenum.

Find Patent Forward Citations

Motoyama, Koichi. (2023). Semiconductor structure with stacked vias having dome-shaped tips (U.S. Patent No. 11848264). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11848264

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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