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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11843041 B1

PDFFull Text
Date of Patent:
Dec. 12, 2023

Filed:

Jul. 01, 2022

Gate etch back with reduced loading effect

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Chen Lo, Hsinchu County, TW;

Jung-Hao Chang, Taichung, TW;

Li-Te Lin, Hsinchu, TW;

Pinyen Lin, Rochester, NY (US);

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Omar F Mojaddedi

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/67 (2006.01); H01J 37/00 (2006.01); H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/84 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01J 37/00 (2013.01); H01L 21/0228 (2013.01); H01L 21/02274 (2013.01); H01L 21/28088 (2013.01); H01L 21/3065 (2013.01); H01L 21/31122 (2013.01); H01L 21/32136 (2013.01); H01L 21/67069 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/42376 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/785 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/165 (2013.01); H01L 29/4966 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes first and second gate structures over a substrate, the first gate structure has a first width that is smaller than a second width of the second gate structure, in which a lower portion of the first gate structure having a first work-function material (WFM) layer, the first WFM layer having a top surface, a lower portion of the second gate structure having a second WFM layer, the second WFM layer having a top surface. A first gate electrode is disposed over the first WFM layer and a second gate electrode has a lower portion disposed in the second WFM layer, in which the first gate electrode has a first width that is smaller than a second width of the second gate electrode, and wherein the top surface of the second WFM layer is at a level below a top surface of the second gate electrode.

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