The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Jul. 29, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Wei Chia, Kaohsiung, TW;
Chun-Hao Chou, Tainan, TW;
Kai-Chun Hsu, New Taipei, TW;
Kuo-Cheng Lee, Tainan, TW;
Shyh-Fann Ting, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
An image sensor includes a semiconductor substrate, a gate dielectric layer, a gate electrode, a protection oxide film, and a nitride hard mask. The gate dielectric layer is over the semiconductor substrate. The gate electrode is over the gate dielectric layer. An entirety of a first portion of the gate dielectric layer directly under the gate electrode is of uniform thickness. The protection oxide film is in contact with a top surface of the gate electrode. The gate dielectric layer extends beyond a sidewall of the protection oxide film. The nitride hard mask is in contact with a top surface of the protection oxide film.