The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Apr. 20, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Harry-Hak-Lay Chuang, Zhubei, TW;
Hung Cho Wang, Taipei, TW;
Tong-Chern Ong, Chong-Her, TW;
Wen-Ting Chu, Kaohsiung, TW;
Yu-Wen Liao, New Taipei, TW;
Kuei-Hung Shen, Hsinchu, TW;
Kuo-Yuan Tu, Hsinchu, TW;
Sheng-Huang Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to an integrated circuit. The integrated circuit includes a an inter-layer dielectric (ILD) structure laterally surrounding a conductive interconnect. A dielectric protection layer is disposed over the ILD structure and a passivation layer is disposed over the dielectric protection layer. The passivation layer includes a protrusion extending outward from an upper surface of the passivation layer. A bottom electrode continuously extends from over the passivation layer to between sidewalls of the passivation layer. A data storage element is over the bottom electrode and a top electrode is over the data storage element.