The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Aug. 26, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Han-Yu Lin, Nantou County, TW;
Chansyun David Yang, Shinchu, TW;
Tze-Chung Lin, Hsinchu, TW;
Fang-Wei Lee, Hsinchu, TW;
Fo-Ju Lin, Keelung, TW;
Li-Te Lin, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device includes forming a channel member suspended above a substrate, depositing a dielectric material layer wrapping around the channel member, performing an oxidation treatment to a surface portion of the dielectric material layer, selectively etching the surface portion of the dielectric material layer to expose sidewalls of the channel member, performing a nitridation treatment to remaining portions of the dielectric material layer and the exposed sidewalls of the channel member, thereby forming a nitride passivation layer partially wrapping around the channel member. The method also includes repeating the steps of performing the oxidation treatment and selectively etching until top and bottom surfaces of the channel member are exposed, removing the nitride passivation layer from the channel member, and forming a gate structure wrapping around the channel member.