The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Dec. 06, 2018
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Ilanit Fisher, San Jose, CA (US);

Raashina Humayun, Los Altos, CA (US);

Michal Danek, Cupertino, CA (US);

Patrick Van Cleemput, West Linn, OR (US);

Shruti Thombare, Sunnyvale, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/06 (2006.01); H01L 21/285 (2006.01); C23C 16/455 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
C23C 16/06 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); H01L 21/28556 (2013.01); H01L 21/32051 (2013.01);
Abstract

A method includes arranging a substrate in a processing chamber, and exposing the substrate to a gas mixture including a first metal precursor gas and a second metal precursor gas to deposit a first metal precursor and a second metal precursor onto the substrate at the same time. The method further includes purging the processing chamber, supplying a reactant common to both the first metal precursor and the second metal precursor to form a layer of an alloy on the substrate, and purging the processing chamber.


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