The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Mar. 28, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Sai-Hooi Yeong, Hsinchu County, TW;
Chi-On Chui, Hsinchu, TW;
Kai-Hsuan Lee, Hsinchu, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Chih-Hao Wang, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, an isolation feature over the semiconductor substrate, a fin protruding from the semiconductor substrate and through the isolation feature, a gate stack over and engaging the fin, and a gate spacer on sidewalls of the gate stack. A bottom portion of the sidewalls of the gate stack tilts inwardly towards the gate stack.