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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11823903 B1

PDFFull Text
Date of Patent:
Nov. 21, 2023

Filed:

Dec. 22, 2021

Method for processing workpiece

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yoshihide Kihara, Miyagi, JP;

Toru Hisamatsu, Miyagi, JP;

Tomoyuki Oishi, Miyagi, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 1/48 (2012.01); G03F 1/80 (2012.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); G03F 1/48 (2013.01); G03F 1/80 (2013.01); H01J 37/32 (2013.01); H01L 21/0228 (2013.01); H01L 21/0273 (2013.01); H01L 21/0275 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01J 2237/334 (2013.01);
Abstract

According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK) with plasma generated in a processing container (), in the processing container () of a plasma processing apparatus () in which the wafer (W) is accommodated, and the step includes steps STto STof conformally forming a protective film (SX) on the surface of the mask (MK), and steps STto STof etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK) on which the protective film (SX) is formed.

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