The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Oct. 29, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Akhil Mehrotra, Sunnyvale, CA (US);
Vinay Shankar Vidyarthi, San Jose, CA (US);
Daksh Agarwal, Sunnyvale, CA (US);
Samaneh Sadighi, San Jose, CA (US);
Jason Kenney, Santa Clara, CA (US);
Rajinder Dhindsa, Pleasanton, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.