The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

May. 14, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yi-Huan Chen, Hsinchu, TW;

Chien-Chih Chou, New Taipei, TW;

Szu-Hsien Liu, Hsinchu County, TW;

Kong-Beng Thei, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0646 (2013.01); H01L 29/66734 (2013.01);
Abstract

A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a doped region within the substrate; a pair of source/drain regions extending along a first direction on opposite sides of the doped region; a gate electrode disposed in the doped region, wherein the gate electrode has a plurality of first segments extending in parallel along the first direction; and a protection structure over the substrate and at least partially overlaps the gate electrode.


Find Patent Forward Citations

Loading…