The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

May. 28, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Sin-Yao Huang, Tainan, TW;

Chun-Chieh Chuang, Tainan, TW;

Ching-Chun Wang, Tainan, TW;

Sheng-Chau Chen, Tainan, TW;

Dun-Nian Yaung, Taipei, TW;

Feng-Chi Hung, Chu-Bei, TW;

Yung-Lung Lin, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 23/498 (2006.01); H01L 27/146 (2006.01); H01L 23/00 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/49838 (2013.01); H01L 24/00 (2013.01); H01L 25/50 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 23/52 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80815 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06544 (2013.01);
Abstract

In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first plurality of interconnects arranged within a first inter-level dielectric (ILD) structure on a first substrate, and a second plurality of interconnects arranged within a second ILD structure between the first ILD structure and a second substrate. A bonding structure is disposed within a recess extending through the second substrate. A connector structure is vertically between the first plurality of interconnects and the second plurality of interconnects. The second plurality of interconnects include a first interconnect directly contacting the bonding structure. The second plurality of interconnects also include one or more extensions extending from directly below the first interconnect to laterally outside of the first interconnect and directly above the connector structure, as viewed along a cross-sectional view.


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