The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jun. 21, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Injo Ok, Loudonville, NY (US);

Nicole Saulnier, Slingerlands, NY (US);

Kevin W. Brew, Niskayuna, NY (US);

Steven Michael McDermott, Wynantskill, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Hari Prasad Amanapu, Guilderland, NY (US);

Adra Carr, Albany, NY (US);

Prasad Bhosale, Albany, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8413 (2023.02); H10N 70/8828 (2023.02);
Abstract

A method for forming a phase-change memory cell includes depositing a metal layer over a wafer such that the metal layer covers connection structures of the wafer. The method further includes removing a portion of the metal layer such that the connection structures of the wafer remain covered by a remaining portion of the metal layer. The method further includes forming a phase-change memory stack on a stack area of the remaining portion of the metal layer. The method further includes removing the remaining portion of the metal layer except in the stack area.


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