The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Jul. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Huan Chen, Hsin Chu, TW;
Kong-Beng Thei, Pao-Shan Village, TW;
Chien-Chih Chou, New Taipei, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Szu-Hsien Liu, Zhubei, TW;
Huan-Chih Yuan, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.